MA Qiang, LIN Dong-sheng, JIN Xiao-ming, CHEN Wei, YANG Shan-chao, LI Rui-bin, QI Chao, WANG Gui-zhen. Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design[J]. Atomic Energy Science and Technology, 2012, 46(增刊): 592-597. DOI: 10.7538/yzk.2012.46.suppl.0592
Citation: MA Qiang, LIN Dong-sheng, JIN Xiao-ming, CHEN Wei, YANG Shan-chao, LI Rui-bin, QI Chao, WANG Gui-zhen. Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design[J]. Atomic Energy Science and Technology, 2012, 46(增刊): 592-597. DOI: 10.7538/yzk.2012.46.suppl.0592

Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design

  • Using the orthogonal design method to arrange tests, a satisfactory result can be acquired with less experiments. The transient ionizing radiation effects experiments on BiMOS op-amp CA3140 were done on “Qiangguang-1” accelerator in this work to study the impact of different factors on the recovery time of CA3140 by transient ionizing irradiation. The sub-sequence and the significant level of the factors for the recovery time, as well as the worst bias conditions for CA3140 under transient ionizing irradiation were obtained.
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