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YANG Shan-chao, MA Qiang, JIN Xiao-ming, LI Rui-bin, LIN Dong-sheng, CHEN Wei, LIU Yan. Research of Pulse Gamma Ray Radiation Effect on Microcontroller System[J]. Atomic Energy Science and Technology, 2012, 46(增刊): 602-606. DOI: 10.7538/yzk.2012.46.suppl.0602
Citation: YANG Shan-chao, MA Qiang, JIN Xiao-ming, LI Rui-bin, LIN Dong-sheng, CHEN Wei, LIU Yan. Research of Pulse Gamma Ray Radiation Effect on Microcontroller System[J]. Atomic Energy Science and Technology, 2012, 46(增刊): 602-606. DOI: 10.7538/yzk.2012.46.suppl.0602
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Research of Pulse Gamma Ray Radiation Effect on Microcontroller System

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    • Abstract
  • An experimental result of power chip LM7805 and microcontroller EE80C196KC20 based on the EE80C196KC20 testing system was presented. The pulse gamma ray radiation effect was investigated using “Qiangguang-Ⅰ” accelerator. Latchup threshold of the microcontroller was obtained, and the relationship of supply current and I/O output with the transient dose rate was observed. The result shows that the restrainability of power chip on pulse gamma ray radiation induces microcontroller latchup effect.
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