QI Chao, LIN Dong-sheng, CHEN Wei, YANG Shan-chao, WANG Gui-zhen, GONG Jian-cheng, MA Qiang. Experimental Investigations on Transient Ionizing Radiation Induced Function Errors of SRAM Based FPGA[J]. Atomic Energy Science and Technology, 2013, 47(1): 157-160. DOI: 10.7538/yzk.2013.47.01.0157
Citation: QI Chao, LIN Dong-sheng, CHEN Wei, YANG Shan-chao, WANG Gui-zhen, GONG Jian-cheng, MA Qiang. Experimental Investigations on Transient Ionizing Radiation Induced Function Errors of SRAM Based FPGA[J]. Atomic Energy Science and Technology, 2013, 47(1): 157-160. DOI: 10.7538/yzk.2013.47.01.0157

Experimental Investigations on Transient Ionizing Radiation Induced Function Errors of SRAM Based FPGA

  • On the basis of qualitative analysis of the transient ionizing radiation function errors for SRAM based FPGA, the function error threshold was considered to be independent of the quantity of sensitive configuration bits. Different shift registers made up of look up tables and D flip-flops with quite different quantity of sensitive configuration bits were designed. Experimental investigations were performed using pulse gamma ray generated by “Qiang GuangⅠ” accelerator. Comparing with the function status of those circuits under different dose rates, experimental results show that no evidence of the number of sensitive configuration bits affects the function error threshold, and the qualitative analysis is verified.
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