Theoretical Study of Bias Effect on Total Ionizing Dose Irradiation of Ultra-deep Micron MOS Device

The bias effect on total ionizing dose irradiation of ultra-deep micron MOS device was studied in this paper, and an analytical model with corresponding electrical parameters was deduced. Before the total dose effect achieves saturation, the leakage current depends on the bias during irradiation and deposited dose through a specialized expression. The definition of effective deposited dose was introduced, which can be used to translate all kinds of irradiation bias exiting under real situation into the worst case and find electrical response of MOS device using experimental results. Introducing this model into circuit simulation, the total dose effects of circuits were got under different biases during irradiation and the worst case bias was identified.