SU Dan, ZHANG Guo-guang, LU Min, YAO Chang-sheng, ZHAO Xiao, FENG Shu-qiang. Study on Performance of GaN Radiation Detector[J]. Atomic Energy Science and Technology, 2013, 47(5): 884-887. DOI: 10.7538/yzk.2013.47.05.0884
Citation: SU Dan, ZHANG Guo-guang, LU Min, YAO Chang-sheng, ZHAO Xiao, FENG Shu-qiang. Study on Performance of GaN Radiation Detector[J]. Atomic Energy Science and Technology, 2013, 47(5): 884-887. DOI: 10.7538/yzk.2013.47.05.0884

Study on Performance of GaN Radiation Detector

  • Gallium nitride (GaN) as a radiation detector has many advantages, such as wide forbidden band, high resistant radiation and so on. It can be applied in high temperature and high density radiation field environment. The energy spectrum of 241Am α particle was measured by GaN semiconductor detector, and the energy resolution of which is about 30%. At the same time, the energy and detection efficiency calibration of GaN detector was carried out using Si semiconductor detector which was assumed to have 100% detection efficiency. The detection efficiency of GaN detector was up to 80.1%. Finally, current-voltage (I-V) curve was measured using Keithley 2635 electrometer. The background current density is less than 70 nA/cm2 at -15 V reverse bias.
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