Geant4 Simulation of Neutron Displacement Damage in SiC

The transport of neutron in SiC was simulated with the Geant4. The number of displacement damage induced by different energy neutrons was calculated and the distribution of displacement damage of 14.1 MeV neutron was obtained. The factors that impact the production of displacement damage were studied, and the contributions of elastic scattering and non-elastic process to defect production were analyzed. The damage profile induced by neutron reaction of each stage was obtained, and the influences on the distribution of total damage were further investigated.