Study on Method for Pulsed Laser Simulating SRAM Single Event Upset

Pulsed laser single event effect (PLSEE) facility was used to study the method for simulating single event upset (SEU) of 0.13 μm and 0.35 μm process SRAM by backside substrate. SEU threshold energy and SEU cross section, which are affected by laser focusing depth, laser pulse fluence, test mode and data stored in chips, are two main subjects of SEU test. The test results show that only focusing on active layer of chips can get the smallest SEU threshold energy and the biggest SEU cross section, which are consistent with heavy ion results. The fluence has no effect on SEU threshold energy test but greatly affects SEU cross section test, and laser pulse fluence must be smaller than 1×10⁷cm^-2. Test mode and data stored in chips have no effects on SEU test.