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JIANG Yu-guang, FENG Guo-qiang, ZHU Xiang, MA Ying-qi, SHANGGUAN Shi-peng, YU Yong-tao, HAN Jian-wei. Secondary Spot for Pulsed Laser SEE Testing[J]. Atomic Energy Science and Technology, 2013, 47(12): 2361-2364. DOI: 10.7538/yzk.2013.47.12.2361
Citation: JIANG Yu-guang, FENG Guo-qiang, ZHU Xiang, MA Ying-qi, SHANGGUAN Shi-peng, YU Yong-tao, HAN Jian-wei. Secondary Spot for Pulsed Laser SEE Testing[J]. Atomic Energy Science and Technology, 2013, 47(12): 2361-2364. DOI: 10.7538/yzk.2013.47.12.2361
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Secondary Spot for Pulsed Laser SEE Testing

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    • Abstract
  • The pulsed laser is an effective method to simulate single event effect (SEE) induced by heavy ions. When the laser focused on the chip surface using the backside approach, the laser spot was observed. The experiment data of Si substrate and Si wafer show that the secondary spot is formed due to the reflection of metal layer, and it is verified by the thickness of Si substrate and the depth of laser focusing.
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