Experimental Research of Transient Dose Rate Effect on CMOS Circuit With Feature Size of 0.18 μm

The transient dose rate effect on the CMOS inverter and the CMOS static random access momery (SRAM) with feature size of 0.18 μm was studied under pulsed laser and pulsed X-ray. The transient dose rate effect on deep sub-micron CMOS circuit was measured and compared with that on μm CMOS circuit. The results show that 0.18 μm CMOS SRAM is more susceptible to transient dose rate environment than μm CMOS SRAM and μm CMOS inverter is more susceptible than 0.18 μm CMOS inverter.