HE An-lin, GUO Gang, CHEN Li, SHEN Dong-jun, REN Yi, LIU Jian-cheng, ZHANG Zhi-chao, CAI Li, SHI Shu-ting, WANG Hui, FAN Hui, GAO Li-juan, KONG Fu-quan. Single Event Upset Test of Low Energy Proton on 65 nm SRAM[J]. Atomic Energy Science and Technology, 2014, 48(12): 2364-2369. DOI: 10.7538/yzk.2014.48.12.2364
Citation: HE An-lin, GUO Gang, CHEN Li, SHEN Dong-jun, REN Yi, LIU Jian-cheng, ZHANG Zhi-chao, CAI Li, SHI Shu-ting, WANG Hui, FAN Hui, GAO Li-juan, KONG Fu-quan. Single Event Upset Test of Low Energy Proton on 65 nm SRAM[J]. Atomic Energy Science and Technology, 2014, 48(12): 2364-2369. DOI: 10.7538/yzk.2014.48.12.2364

Single Event Upset Test of Low Energy Proton on 65 nm SRAM

  • Based on the Beijing HI-13 tandem accelerator proton beam source and technical improvements, 2.15 MeV low energy proton beam was obtained. Single event upset (SEU) test of low energy proton was carried out on commercial 65 nm 4M×18 bit large capacity SRAM. The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism, and the SEU cross section caused by this mechanism is about 2.3 magnitude order larger than that caused by nuclear reaction mechanism. With the test data, the proton upset mechanism, LET and range, critical charge, and on-orbit soft error rate (SER) were analyzed. The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER can be a significant contribution to total proton SER in space.
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