LI Rui-bin, CHEN Wei, WANG Gui-zhen, LIN Dong-sheng, QI Chao, BAI Xiao-yan, YANG Shan-chao. Design and Effect Analysis of Sensitive Switch for Transient Ionizing Radiation[J]. Atomic Energy Science and Technology, 2014, 48(增刊1): 712-716. DOI: 10.7538/yzk.2014.48.S0.0712
Citation: LI Rui-bin, CHEN Wei, WANG Gui-zhen, LIN Dong-sheng, QI Chao, BAI Xiao-yan, YANG Shan-chao. Design and Effect Analysis of Sensitive Switch for Transient Ionizing Radiation[J]. Atomic Energy Science and Technology, 2014, 48(增刊1): 712-716. DOI: 10.7538/yzk.2014.48.S0.0712

Design and Effect Analysis of Sensitive Switch for Transient Ionizing Radiation

  • Using transient radiation sensitive switch can prevent latch-up or damage for electronic devices in transient ionizing radiation environment. High performance switch should meet the requirements: high sensitivity, anti-radiation, anti-interference and high driving performance. Discharging-type and charging-type switches were designed based on RC delay circuit, and two switches’ sensitivity, cutoff duration stability and anti-interference performance were tested in transient ionizing irradiation experiments. The results show that the cutoff duration stability and anti-interference performance of discharging-type switch are worse than that of charging-type switch, and the detector in discharging-type switch is better to use silicon-controlled rectifier than to use diode or bipolar. Charging-type switch fits to be used in multiple-pulse radiation environment, but the input of the buffer in switch could not contain electro-static discharge (ESD) circuits because it could affect the cutoff duration of the switch.
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