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LIU Yan, CHEN Wei, YANG Shan-chao, QI Chao, WANG Gui-zhen, LIN Dong-sheng, GUO Xiao-qiang, JIN Jun-shan. Experimental Research of Transient Ionizing Upset Effect on Neutron Irradiated CMOS SRAM[J]. Atomic Energy Science and Technology, 2014, 48(增刊1): 723-726. DOI: 10.7538/yzk.2014.48.S0.0723
Citation: LIU Yan, CHEN Wei, YANG Shan-chao, QI Chao, WANG Gui-zhen, LIN Dong-sheng, GUO Xiao-qiang, JIN Jun-shan. Experimental Research of Transient Ionizing Upset Effect on Neutron Irradiated CMOS SRAM[J]. Atomic Energy Science and Technology, 2014, 48(增刊1): 723-726. DOI: 10.7538/yzk.2014.48.S0.0723
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Experimental Research of Transient Ionizing Upset Effect on Neutron Irradiated CMOS SRAM

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  • Transient ionizing radiation results were presented on neutron irradiated 0.15 μm commercial CMOS SRAMs, and the transient ionizing upset effect was observed. Compared with the non-neutron irradiated SRAMs, the neutron irradiated SRAMs exhibit higher tolerance in the transient ionizing environment. Neutron irradiation could enhance the transient ionizing upset threshold on CMOS devices. The neutron induced minority carrier lifetime reduction is the main reason for the experiment result.
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