Test Study on Transient Dose Rate Effect of EEPROM

Transient dose rate effects were studied for three kinds of floating gate electrically erasable programmable read only memories (EEPROMs) using Qiangguang-1 accelerator. The dose rate latchup characterization and high dose rate memory retention were tested. Prior to exposure, each byte was written with a 55H (01010101). EEPROMs were powered on during exposure. After exposure, supply currents and memory data of EEPROMs were measured. The result shows that EEPROMs are susceptible to latchup. Average latchup levels are 2.0×10⁷, 2.3×10⁷ and 7.0×10⁶ Gy(Si)/s for AT28C256, AT28C010 and AT28C040. Following exposure to 1.0×10⁹ Gy(Si)/s, no data was lost and all EEPROMs can be read and written exactly.