Comparison of Multi-bit Upset in FPGA Induced by Pulsed Laser and Heavy Ions

FENG Guo-qiang; JIANG Yu-guang; ZHU Xiang; HAN Jian-wei

doi:10.7538/yzk.2014.48.S0.0732

Atomic Energy Science and Technology > 2014 > 48(增刊1): 732-736. > DOI: 10.7538/yzk.2014.48.S0.0732

FENG Guo-qiang, JIANG Yu-guang, ZHU Xiang, HAN Jian-wei. Comparison of Multi-bit Upset in FPGA Induced by Pulsed Laser and Heavy Ions[J]. Atomic Energy Science and Technology, 2014, 48(增刊1): 732-736. DOI: 10.7538/yzk.2014.48.S0.0732

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Comparison of Multi-bit Upset in FPGA Induced by Pulsed Laser and Heavy Ions

1.
National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

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The testing method of multi-bit upset in SRAM FPGA by pulsed laser was investigated. There are three types of multi-bit upsets according to physical location in FPGA, such as one byte in one frame, adjacent bytes in one frame and adjacent frames. Virtex-Ⅱ FPGA were irradiated by pulsed laser and heavy ions, and the species and relative positions for multi-bit upset were obtained. The relative physical positions of multi-bit upset induced by pulsed laser and heavy ions are same. The saturation cross-sections of multi-bit upset induced by pulsed laser and heavy ions are consistent. The pulsed laser testing is fit for the investigation of multi-bit upset in FPGA.
- FPGA,
- multi-bit upset,
- pulsed laser

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Comparison of Multi-bit Upset in FPGA Induced by Pulsed Laser and Heavy Ions

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