Development and Experimental Application of Sample Temperature Measurement and Control System for Accelerator-based Single Event Effect

In order to meet domestic demands of studying the relationship between temperature and single event effect (SEE) cross-section, a device under test (DUT) temperature measurement and control system was developed based on Beijing HI-13 tandem accelerator SEE irradiation facility. The DUT temperature could be measured and controlled within the range of 90-450 K, and its control accuracy is better than ±1 K. To verify the reliability of this system, the relationship between temperature and single event upset (SEU) cross-section was investigated in 150 nm thin film transistor (TFT) technology SRAM in the temperature range of 215-353 K. The results show that the SEU cross-section increases with temperature, and it is consistent with the theoretical expected result.