Deposition Rate of Copper Nanocluster Film Prepared by Plasma Gas Condensation

Cu nanocluster films were deposited on substrates through Cu nanocluster beams generated by the plasma gas condensation combining with the differential pumping. Effects of sputtering current, Ar flow rate and aggregation zone length on deposition rate of films were studied. Their microstructures were characterized by X-ray diffractometer (XRD) and transmission electron microscope (TEM). The results show that keeping other process parameters fixed, the deposition rate of Cu nanocluster films increases gradually and then decreases with the increasing of sputtering current and Ar flow rate. But the effect of aggregation zone length on deposition rate is irregular. All of these results are from the variation of mean free path of Cu nanocluster. Cu nanocluster films consist of nanocluster particles with about several nanometers and have poor crystallinity.