HUANG Shao-yan, LIU Min-bo, GUO Xiao-qiang, XIAO Zhi-gang, SHENG Jiang-kun, WANG Zu-jun, YAO Zhi-bin, HE Bao-ping, TANG Ben-qi. Displacement Damage Equivalence for Proton in InGaAsP Device[J]. Atomic Energy Science and Technology, 2016, 50(9): 1701-1705. DOI: 10.7538/yzk.2016.50.09.1701
Citation: HUANG Shao-yan, LIU Min-bo, GUO Xiao-qiang, XIAO Zhi-gang, SHENG Jiang-kun, WANG Zu-jun, YAO Zhi-bin, HE Bao-ping, TANG Ben-qi. Displacement Damage Equivalence for Proton in InGaAsP Device[J]. Atomic Energy Science and Technology, 2016, 50(9): 1701-1705. DOI: 10.7538/yzk.2016.50.09.1701

Displacement Damage Equivalence for Proton in InGaAsP Device

  • The displacement damage equivalence based on nonionizing energy loss (NIEL) was discussed. The NIEL in InGaAsP induced by proton with different energy was calculated. The Coulomb scattering NIEL was calculated by analytical method and the applicability of different Coulomb scattering models was discussed. The nuclear reaction NIEL was simulated by Monte-Carlo method. InGaAsP multi-quantum well laser diodes were selected and irradiated by 4, 5, 8 MeV protons to obtain threshold current damage factor. The results show that the threshold current damage factor experimentally obtained from proton with different energy is linear with NIEL calculation result.
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