Laser Microbeam Experiment on Single Event Effect in Ferroelectric Random Access Memory

The influence of operating frequency on single event upset (SEU) in ferro-electric random access memory (FRAM) was studied using the pulsed laser microbeam single event effect (SEE) facility. The experiment results show that the SEU cross section of FRAM increases notably with the decrease of operating frequency, and the SEU is caused by peripheral circuit. The cross section from 1 to 0 upset is larger than that from 0 to 1. The analysis of the function timing of FRAM and the SEU cross section under different duty cycles of chip enable (CE) signal indicates that the extension of CE active time due to reduced operating frequency has a direct relationship with the increase of SEU cross section. The experiment on single event latch-up (SEL) sensitivity of function block in FRAM was also studied and the SEL energy threshold and saturated SEL cross section were presented. Data upsets caused by SEL at both static and dynamic modes were discussed at the same time respectively. It’s found that the test device is more susceptible to SEL-induced upsets at dynamic mode.