Research on Mechanism of Elevated Temperature Irradiation Accelerated Test for Enhanced Low Dose Rate Sensitivity

A physical model of enhanced low dose rate sensitivity (ELDRS) including temperature field was established, and the relationship among the irradiation temperature, dose rate, total dose and the concentration of radiation induced product was given using the finite element simulation. The effect of process parameters (such as the concentration and energy level of oxide trap, the concentration hydrogen defect and the passivation energy of interface trap) on the optimum irradiation temperature was analyzed. The results show that the optimum irradiation temperature is the competition result between the generation and annealing of irradiation induced product. The annealing behavior is the main factor to determine the optimum irradiation temperature, so the active energy of oxide trap and passivation energy of interface trap have obvious affection on the optimum temperature. The active energy of oxide trap and passivation energy of interface trap are the main reason for the difference of optimum irradiation temperature of different devices.