Electron-irradiated Induced Change of Minority Carrier Lifetime of GaInP/GaAs/Ge Triple-junction Solar Cell

In order to study the electron irradiation effect on space solar cells, electron-irradiated induced change of minority carrier lifetime of GaInP/GaAs/Ge triple-junction solar cells was investigated by using photoluminescence (PL) measurements. The variation of PL intensities of GaAs mid-cell and GaInP top-cell with electron fluence was analyzed. The normalized luminescence intensity was fitted with the change of the electron fluence. The minority carrier non-radiative recombination lifetimes of GaInP top-cell and GaAs mid-cell with electron fluence were obtained, respectively. Furthermore, by comparing the non-radiative recombination lifetimes of minority carrier before and after irradiation, it is found that the radiation resistance of GaInP top-cell is better than that of GaAs mid-cell.