AN Heng, XUE Yuxiong, YANG Shengsheng, WANG Jun, ZHANG Chenguang. Simulation and Investigation of Deep Charging Characteristic for Dielectric Material[J]. Atomic Energy Science and Technology, 2018, 52(2): 340-344. DOI: 10.7538/yzk.2018.52.02.0340
Citation: AN Heng, XUE Yuxiong, YANG Shengsheng, WANG Jun, ZHANG Chenguang. Simulation and Investigation of Deep Charging Characteristic for Dielectric Material[J]. Atomic Energy Science and Technology, 2018, 52(2): 340-344. DOI: 10.7538/yzk.2018.52.02.0340

Simulation and Investigation of Deep Charging Characteristic for Dielectric Material

  • According to the deep charging problem of dielectric material, based on high energy electron transfer model in the dielectric material, the charge deposition at different depths of the dielectric material was simulated and analyzed. The effect of the thickness of the metal layer and the number of layer in the dielectric on charge deposition was analyzed. Based on the simulation result, a test system of a plate-type multilayer structure was designed. The charge deposition test was analyzed by accelerator irradiation test, and the results were compared with the simulation results. The results show that the multilayer structure of 8 layers can effectively obtain the charge deposition distribution characteristic of the deep charge of the dielectric. The results of the study can be directly applied to the space radiation effect monitoring load.
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