Experimental Simulation Study on Single Event Effect Induced by High Energy Electron

Based on 2 MeV self-shielding electron accelerator and 10 MeV electron linear accelerator, the electron single event effect experiment was carried out. Under the condition of the incident electron energy constant, the device operating voltage was changed within ±20% for single event upset experiment. The experiment results indicate that 45 nm SRAM (rated working voltage of 1.5 V) has significant single event upset under the high-energy electron irradiation generated by the electron linear accelerator, and the single event upset cross section changing with the incident electron energy is consistent with literature data. The change trend of electron induced single event upset cross section with the operating voltage of the device is also consistent with the theoretical expectation. The smaller the operating voltage, the lower the critical charge of the single event upset and the higher the cross section.