Error Rate Prediction of Low Energy Proton Induced Single Event Upset for 65 nm SRAM

The single event effect induced by proton is main radiation problem of nanometre integrated circuit applied in spacecraft. In this paper, the low energy proton induced single event upset test was carried out on a 65 nm process, 4 M×18 bit static random access memory (SRAM). The error rate caused by low energy proton, high energy proton and heavy ion was estimated by using Space Radiation 7.0 program for geosynchronous orbit and low earth orbit. The prediction result of error rate shows that the error rate of low energy proton accounts for 1%-86% of the total error rate under different orbits and environmental modes, and the error rate caused by low energy proton is dominant in environmental modes such as solar proton event and earth capture zone. It is suggested that the components in space application should be insensitive to low energy proton.