Single Event Effect Sensitivity Analysis of SiC Device

The third generation semiconductor SiC devices with the advantages of high operating voltage and low power dissipation are ideal candidates for new generation spacecraft. To provide the basis data for SiC device selection and radiation hardness assurance for spacecraft, the sensitivity of single event effect (SEE) on SiC devices was analyzed. Heavy ion experiments were carried out with SiC MOSFET and SiC diodes. Permanent damage in SiC devices biased at lower voltages was caused by heavy ions, resulting in increasing of leakage current and/or single event burnout (SEB). The similar results were observed for both SiC MOSFET and SiC diodes. The experiment result shows that the SiC device is sensitive to SEE, which is independent of the type of devices and relates to SiC material. More studies on radiation effect mechanism, experiment method and device radiation hardness technology for SiC are needed for space applications.