Study of Optical Radiation from Low-energy Xe Ion Irradiation on Al Surface

Optical emission from sputtered Al atoms in the interaction of 200-550 keV Xe10+ ions with Al surface was measured, and spectral line intensity ratio of Al Ⅰ 308.10, 309.14, 394.52 and 396.28 nm and photon yield were investigated as a function of the incident ion energy. There is little change for spectral line intensity ratio with the increasing collision ion energy, and the photon yield of the spectral line do not appear the same tendency with the increasing collision energy within the energy of the present experiment. At 450 keV, the photon yield presents a maximum, and the photon yield is reduced with the energy increase when the incident ion energy is more than 450 keV. Combined with the nuclear stopping and electronic stopping effect, it is shown that the nuclear stopping effect plays a leading role in the collision when the incident ion energy is less than 450 keV, and the electron stopping plays a leading role in the collision when the incident ion energy is more than 450 keV.