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ZHOU Shuxing, FANG Renfeng, CHEN Chuanliang, ZHANG Xin, WEI Yanfeng, CAO Wenyu, LEI Shulai, AI Likun. Effects of Electron Irradiation at Different Energy and Fluences on Electrical Properties of InP HEMT Structure[J]. Atomic Energy Science and Technology, 2021, 55(12): 2274-2281. DOI: 10.7538/yzk.2021.youxian.0483
Citation: ZHOU Shuxing, FANG Renfeng, CHEN Chuanliang, ZHANG Xin, WEI Yanfeng, CAO Wenyu, LEI Shulai, AI Likun. Effects of Electron Irradiation at Different Energy and Fluences on Electrical Properties of InP HEMT Structure[J]. Atomic Energy Science and Technology, 2021, 55(12): 2274-2281. DOI: 10.7538/yzk.2021.youxian.0483
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Effects of Electron Irradiation at Different Energy and Fluences on Electrical Properties of InP HEMT Structure

  • Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science, Xiangyang 441053, China

  • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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    • Abstract
  • The InGaAs/InAlAs InP high electron mobility transistor (HEMT) structures with latticematched channels were grown by gas source molecular beam epitaxy (GSMBE). Effects of electron irradiation at different energy and fluence on the electrical properties of InP HEMT structures were comprehensively investigated. It was found that high energy electron beam has an obvious effect on the electrical properties of twodimensional electron gas (2DEG) at the same fluence of 2×1015 cm-2. After the fluence exceeding 4×1014 cm-2, the 2DEG mobility and density begin to decrease obviously, and did not reach saturation until the fluence was more than 3×1015 cm-2. These changes could be mainly attributed to the aggregation of irradiationinduced defects at the channel heterogeneous interface with the increase of displacement damage dose.
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    • References (31)
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