Characterization of Single Event Transient in 14 nm FinFET Technology

In order to evaluate the intrinsic radiation hardness of the fin field effect transistor (FinFET) device, the characteristics of single event transient (SET) were studied by 3D technology computeraided design (TCAD) simulations in the 14 nm FinFET technology. The results show that the singleevent sensitivity varies according to LET values and incident positions. The width of SET pulse broadens with the increase of LET values. Besides, the response of SET has a complicated relationship with the strike location. For lowLET values (LET≤1 MeV·cm2/mg), the SET response has a strong dependency on the place where it is struck by heavy ions. For highLET values (LET>10 MeV·cm2/mg), the strike location dependency of the SET response diminishes due to the enhanced substrate charge collection.