Investigation of Ionization-induced Parameter Degradation in GLPNP Bipolar Transistors at Different Temperatures

In this paper, the special test structure gated lateral PNP (GLPNP) bipolar transistors, irradiated in different temperatures, were selected to investigate the response mechanism of temperature and dose to radiation damage. The results show that the both of temperature and dose play primary role in determining the dynamic balance of the interfacetrap buildup and annealing. Elevating temperature during irradiation can contribute to the increase of degradation at low dose level, and further decrease in temperature will enhance interfacetrap buildup at high dose level.