Comparative Experimental Study on Space Electrostatic Discharge Effect and Single Event Effect of 130 nm SOI D Flip-flop Chains

Space electrostatic discharge effect (SESD) and single event effect (SEE) are two significant causes of anomalies in satellite devices. However, there are difficulties in precisely distinguishing which effect causes the specific fault in space applications. In the present study work, D flipflop chains fabricated with 130 nm SOI process technology were adopted as the device under test (DUT). By utilizing an ESD generator and a pulsed laser experimental facility, the similarities and differences of soft errors caused by SESD and SEE were explored, with experimental variables such as the radiation source energy, test mode, topological structure, and radiationhardened structure of the device. The test results of the present study can provide an experimental basis for anomaly identification and protection design.