LI Bo, WANG Lei, LIU Fanyu, CHEN Siyuan, LU Jiang, SHU Lei. Review of Radiation Hardening by Process Technology in Integrated Circuit and Power Device[J]. Atomic Energy Science and Technology, 2024, 58(S2): 512-526. DOI: 10.7538/yzk.2024.youxian.0435
Citation: LI Bo, WANG Lei, LIU Fanyu, CHEN Siyuan, LU Jiang, SHU Lei. Review of Radiation Hardening by Process Technology in Integrated Circuit and Power Device[J]. Atomic Energy Science and Technology, 2024, 58(S2): 512-526. DOI: 10.7538/yzk.2024.youxian.0435

Review of Radiation Hardening by Process Technology in Integrated Circuit and Power Device

  • With the rapid development of aerospace equipment and utilization, especially deep space probes, the radiation hardening level of microelectronics has been widely concerned. Radiation hardening by process technology is one of important methods to improve radiation tolerance of spaceborne electronics. In this paper, the recent research progress on the radiation mechanisms and radiation hardening by process technology of integrated circuits and power devices are introduced and summarized, focusing on total ionizing dose effects and single event effects in space. These reviews can provide a useful reference for the development and applications of radiation hardening by process technology.
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