Structural Influence on Radiation-induced Single-event Effects in SiC MOSFETs: Comparative Analysis of Planar and Trench Designs

The single-event susceptibility of three silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices structures (planar, trench and double trench) is researched by the technology computer-aided design (TCAD) simulation. Comparative analysis of the heavy-ion irradiation effects on three device structures reveals distinct susceptibility characteristics. The gate oxide region is identified as the most sensitive position in planar devices, while trench and double-trench structures exhibit no localized sensitive regions. Furthermore, the single-event susceptibility demonstrates strong depth dependence across all three structures, with enhanced vulnerability observed at greater ion penetration depths.