Abstract: Superconducting film is prepared by implanting high dose As ions with 150keV into Nb film on the microcrystallite glass substrates, and annealing at thetemperature of 800℃ for 30 minutes. in the vacuum of 1.3×10~(-5) Pa. Thesuperconducting transition temperature, T_C, equals 6.6K. The thickness of implan-tation layer is about 67 nm. The concentration profile of arsenic in the implanta-tion layer is measured by iterative subtracting backscattering spectrum method.The concentration ratio of Nb atom to As atom, N_(Nb)/N_(A?)=2.2, isobtained. Consequently, the sample is not an ideal Nb_3As of Ti_3P configurationbut a Nb rich superconductor film of Nb(As). However, its superconductingtransition temperature is higher than that of Nb_3As of Ti_3P type. The latter'stransition temperature is 0.3 K only.