用C离子的弹性反冲法测固体中氢分布

H DEPTH PROFILING IN SOLID BY ERD WITH C IONS

摘要: 文章介绍了用1.7MV小串列加速器提供的4—7MeV多电荷C离子,采用弹性反冲法(ERD)分析了α-Si:H中氢元素的深度分布。计算表明,近表面处的深度分辨率为15-30nm,可探测深度100—700nm。探讨了入射能量和散射几何条件的优化问题。比较了几种分析方法的测量结果。

Abstract: Hydrogen depth profiling in α-Si:H is performed by Elastic Recoil Detection(ERD) with multicharged C ions at 2×1.7 MV Tandem Accelerator. Both experl-ment and computer simulation show the depth resolution of 15--30 nm in thenear-surface region. The optimization of the experimental conditions such asincident ions energy and scattering geometry are discussed.