85MeV~(19)F离子辐照InP正电子湮没研究

Positron Annihilation Study on Radiation Effect in InP Irradiated by 85 MeV ~(19)F Ion

摘要: 用正电子湮没寿命技术研究了注量为 1 6× 10 16 cm- 2 的 85MeV 19F离子辐照InP产生的辐照效应。实验表明辐照在InP中产生单空位型缺陷

Abstract: The radiation effect induced by 85 MeV 19 F ion irradiation of 1.6×10 16 cm -2 in P type InP is investigated by positron annihilation lifetime technique. Monovacancies are detected in irradiated P type InP.