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BF_2~+注入硅栅p沟MOS场效应晶体管辐射感生界面陷阱测量

Measurement of Radiation-induced Interface Traps on BF_2~+ Implanted Si-gate PMOSFET

    摘要
  • 摘要: 利用亚阈测量技术对BF+2 注入硅栅PMOSFET辐射感生界面陷阱进行了测量。对BF+2 注入PMOSFET具有抑制辐射感生界面陷阱的机理进行了分析和讨论。

     

    Abstract: The radiation induced interface traps on BF + 2 implanted Si gate PMOSFET are measured using the subthreshold method. The mechanism of depression of the radiation induced interface traps by the BF + 2 implanted has also been analysed.

     

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