质子和中子引起的单粒子效应及其等效关系理论模拟

  • 摘要: 根据器件几何尺寸、掺杂浓度、偏压等因素确定灵敏体积和临界电荷, 从而提出单粒子效应的物理模型。考虑了质子和中子在硅中的弹性散射、非弹性散射、两体反应、多体反应以及质子的库仑散射等所有相互作用类型, 采用蒙特卡罗方法模拟跟踪入射粒子与核的相互作用以及各种次级带电粒子和反冲核的能量沉积过程。采用Ziegler的拟合公式精确计算质子、α粒子、氘核、反冲核等带电离子的能量沉积。根据模拟结果确定了两种粒子引起的单粒子效应等效系数, 并将模拟结果与实验数据进行了对比。

     

    Abstract: The sensitive volume and the critical charge are determined on the basis of the device parameters. The nuclear reaction processes are followed using Monte Carlo simulation. Ziegler empirical formula is adopted to calculate the energy deposition of the charged particles. The equivalent coefficient of cross section of single event upset induced by protons and neutrons is established and the result is compared with the experimental data.

     

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