Ti/Mo膜的X射线光电子能谱分析
Analysis of Ti/Mo Film by X-ray Photoelectron Spectroscopy
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摘要: 利用X射线光电子谱仪 (XPS)分析和Ar+ 刻蚀相结合的方法, 分析了Ti膜表面的化学元素及相应原子的电子结合能。分析结果表明 :Ti膜及膜材料样品表面有大量的C、O元素 膜表面存在从衬底扩散至Ti膜的Mo元素。对样品刻蚀后Ti 2 p的XPS谱进行拟合表明 :Ti膜表面的Ti由TiO2 (约10 0 % )和单质Ti组成, 随刻蚀时间的增加, 部分TiO2 还原至低价Ti;薄的薄膜表面中的Mo由单质Mo和MoO3 组成, 而厚的薄膜以单质Mo为主 表面C由石墨态和结合能为 2 88 2~ 2 88 9eV的碳化物组成。Abstract: Chemical elements and their electronic binding energy on surface of Ti film and bulk are analyzed by X ray photoelectron spectroscopy(XPS) and Ar + etching. The results show that the surface of specimens is contaminated by carbon and oxygen. Mo on surface of Ti film is from substrate. The XPS spectra of Ti 2p of the etched specimens are fitted on.The results show that Ti chemical states on surface of Ti film are TiO 2 with a content of approaching to 100% and a little Ti. Some TiO 2 will be reduced to low chemical states with the increasing of etching time. The chemical states of Mo on surface of Ti film are MoO 3 and Mo. The content of Mo increases as etching time increasing. Chemical state of carbon on the surface of film is graphite and carbide with binding energy of 288.2~288.9 eV.