电沉积法制备镉靶

  • 摘要: 对加速器生产111In所用镉靶制备工艺进行了研究。通过研究电沉积过程中影响Cd靶质量及厚度的各种因素, 确定了最佳工艺条件。所研制的镉靶厚度大于 5 7mg/cm2, 表面光亮、致密、牢固

     

    Abstract: The preparation of the cadmium target for producing 111 In by cyclotron using a method of electrodeposition is described. The optimal process is determined by the studies of parameters that effect the properties of the target and target thickness. A cadmium target with a thickness of more than 57 mg/cm 2 and a shiny and tight layer is obtained.

     

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