He~+、N~+注入GaN的背散射和电学特性研究

@周生强 $北京大学技术物理系!北京 100871@姚淑德$ 北京大学技术物理系!北京 100871,北京大学重离子物理研究所,北京 100871 @焦升贤 $北京大学技术物理系!北京 100871@孙长春$ 北京大学技术物理系!北京 100871@孙昌$北京大学技术物理系!北京 100871

详细信息

RBS Study on GaN Implated With He~+, N~+

摘要: 采用背散射/沟道(RBS/channeling)技术分析了GaN的物理性质和结晶品质。研究了He+、N+注入所引起的GaN的电阻变化和与退火温度的关系。在不同温度下,氮气保护退火30min,用Hall法测量电阻率。测量结果表明:GaN的电阻率增大7～8个数量级。在200～400℃下退火,电阻率变化最大。经高温(600～700℃)退火后,电阻率仍比注入前大3～4个数量级。
- GaN ,
- 离子注入 ,
- 背散射/沟道 ,
- 电阻率 ,
- 辐照损伤
Abstract: The structure and crystal quality of GaN are studied using Rutherford backscattering spectrometry (RBS) and channeling. The samples are grown on sapphire substrate by metalorganic vaporphase epitaxy. The He+, N+ implantation with different ion energy and postimplantation annealing are investigated. 7～8 orders increasing of resistivity is observed by Hall measurements after specific temperature annealing, and the optimized annealing temperature is about 200 and 400 ℃ for He+ and N+, respectively. After 600～700 ℃ annealing, the resistivity is still very high, and radioation damages is found by RBS/channeling.
- GaN ,
- ion implantation ,
- RBS/channeling ,
- resistivity ,
- radioation damage

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