Processing math: 0%

He~+、N~+注入GaN的背散射和电学特性研究

He~+、N~+注入GaN的背散射和电学特性研究[J]. 原子能科学技术, 2003, 37(1): 28-28. DOI: 10.7538/yzk.2003.37.01.0028
引用本文: He~+、N~+注入GaN的背散射和电学特性研究[J]. 原子能科学技术, 2003, 37(1): 28-28. DOI: 10.7538/yzk.2003.37.01.0028
ZHOU Sheng-qiang1, YAO Shu-de1,2, JIAO Sheng-xian1, SUN Chang-chun1, SUN Chang1(1. Department of Technical Physics, Peking University, Beijing 100871, China; 2. Institute of Heavy Ion Physics, Peking University, Beijing 100871, China). RBS Study on GaN Implated With He~+, N~+[J]. Atomic Energy Science and Technology, 2003, 37(1): 28-28. DOI: 10.7538/yzk.2003.37.01.0028
Citation: ZHOU Sheng-qiang1, YAO Shu-de1,2, JIAO Sheng-xian1, SUN Chang-chun1, SUN Chang1(1. Department of Technical Physics, Peking University, Beijing 100871, China; 2. Institute of Heavy Ion Physics, Peking University, Beijing 100871, China). RBS Study on GaN Implated With He~+, N~+[J]. Atomic Energy Science and Technology, 2003, 37(1): 28-28. DOI: 10.7538/yzk.2003.37.01.0028

He~+、N~+注入GaN的背散射和电学特性研究

详细信息
  • 中图分类号: TN204

  • 摘要: 采用背散射/沟道(RBS/channeling)技术分析了GaN的物理性质和结晶品质。研究了He+、N+注入所引起的GaN的电阻变化和与退火温度的关系。在不同温度下,氮气保护退火30min,用Hall法测量电阻率。测量结果表明:GaN的电阻率增大7~8个数量级。在200~400℃下退火,电阻率变化最大。经高温(600~700℃)退火后,电阻率仍比注入前大3~4个数量级。

     

    Abstract: The structure and crystal quality of GaN are studied using Rutherford backscattering spectrometry (RBS) and channeling. The samples are grown on sapphire substrate by metalorganic vaporphase epitaxy. The He+, N+ implantation with different ion energy and postimplantation annealing are investigated. 7~8 orders increasing of resistivity is observed by Hall measurements after specific temperature annealing, and the optimized annealing temperature is about 200 and 400 ℃ for He+ and N+, respectively. After 600~700 ℃ annealing, the resistivity is still very high, and radioation damages is found by RBS/channeling.

     

  • [1] PeartonSJ,VartuliCB,ZolperJC,etal.IonImplantationDopingandIsolationofGaN[J]. ApplPhysLett,1995,67(10):1435~1437.
    [2] 姚淑德,孟兆祥,周生强,等.新型光电材料GaN的离子束辐照改性与结构分析[J]. 原子能科学技术,2000,34(增刊):41~44.
    [3] CaoXA,SinhRK,PeartonSJ,etal.UltraHighTemperatureRapidThermalAnnealingofGaN[J]. MatSciSemiProcessing,1998,1:267~270.
    [4] PeartonSJ,AbernathySR,WilsonRG,etal.EffectsofHydrogenImplantationIntoGaN[J]. NuclInstrumMethods,1999,B 147:171~174.
计量
  • 文章访问数:  538
  • HTML全文浏览量:  0
  • PDF下载量:  1057
  • 被引次数: 0
出版历程
  • 收稿日期:  2001-07-01
  • 刊出日期:  2003-01-19

目录

    /

    返回文章
    返回