RBS Study on GaN Implated With He~+, N~+
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摘要: 采用背散射/沟道(RBS/channeling)技术分析了GaN的物理性质和结晶品质。研究了He+、N+注入所引起的GaN的电阻变化和与退火温度的关系。在不同温度下,氮气保护退火30min,用Hall法测量电阻率。测量结果表明:GaN的电阻率增大7~8个数量级。在200~400℃下退火,电阻率变化最大。经高温(600~700℃)退火后,电阻率仍比注入前大3~4个数量级。Abstract: The structure and crystal quality of GaN are studied using Rutherford backscattering spectrometry (RBS) and channeling. The samples are grown on sapphire substrate by metalorganic vaporphase epitaxy. The He+, N+ implantation with different ion energy and postimplantation annealing are investigated. 7~8 orders increasing of resistivity is observed by Hall measurements after specific temperature annealing, and the optimized annealing temperature is about 200 and 400 ℃ for He+ and N+, respectively. After 600~700 ℃ annealing, the resistivity is still very high, and radioation damages is found by RBS/channeling.
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Keywords:
- GaN ,
- ion implantation ,
- RBS/channeling ,
- resistivity ,
- radioation damage
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