MOSFET功率管器件单粒子烧毁效应(SEB)截面测量

Measurements of the Cross Sections of the Single Event Burnout(SEB) for the Power MOSFET

摘要: 对MOSFET功率管进行了16O、35Cl、79Br离子及高剥离态127I离子的单粒子烧毁(SEB)效应截面测量,得到了SEB截面相对于线性能量转移(LET)值的曲线。对两种类型10片MOSFET功率管器件的SEB截面进行了测量。研究了器件在不同工作条件下,如不同的漏源电压VDS和栅源电压VGS条件下的SEB效应。在相同条件下,127I的SEB截面比79Br的高近两个量级。

Abstract: The experimental details for measurements of the single event burnout(SEB) cross section of power MOSFET are described in case of ions irradiation of~(16)O,~(35)Cl,~(79)Br, and highly stripped charge state ion~(127)I, therefore the curves of the SEB cross section vs. linear energy transfer(LET) values were obtained. The measurements of the SEB cross section for 10 pieces devices of two types were carried out. The laws of the SEB at the different drain-source voltage V_(DS) and different grid-source voltage V_(GS) were demonstrated. The SEB cross section for~(127)I is higher than for~(79)Br by two orders of magnitude nearly at same condition.