Al/Cu微米级厚度薄膜扩散连接工艺及显微组织分析

Process and Microstructure Analysis in Vacuum Diffusion Bonding of Aluminum and Copper Films

摘要: 采用真空扩散连接工艺法,对Al与Cu薄膜扩散连接接头的组织性能进行实验研究,利用扫描电子显微镜(SEM)、X射线衍射(XRD)仪等测试方法对连接接头过渡区及基体组织和性能进行了分析。实验结果表明:采用真空扩散连接工艺,加热温度为250℃、保温时间为30min、压力为5MPa时,Al/Cu薄膜界面处形成明显的过渡区,扩散界面控制在150nm以内。

Abstract: By using vacuum diffusion bonding process, the microstructure and performance of diffusion transition zone for the Al/Cu films diffusion bonding joint were researched by means of SEM and XRD. The results indicate that under the condition of heating temperature 250 ℃, holding time 30 min and pressure force 5 MPa, diffusion interface is produced between copper and aluminum, the width of the diffusion transition zone is less than 150 nm.