Abstract: The numerical analysis and experimental simulation approaches were studied for radiation effects of typical optoelectronic devices, such as Si solar cells and CCDs. At first, the damage mechanism of ionization and displacement effects on solar cells and CCDs was analyzed. Secondly, the output characteristics of Si solar cell by 1 MeV electron radiation was calculated with the two-dimensional device simulation software MEDICI, such as the short circuit current I_(sc), the open-circuit voltage V_(oc) and the maximum power P_(max). The simulation results are in good agreement with the experimental values in a certain range of electron fluence. Meanwhile, the ionization radiation experiment was carried out on the commercial linear CCD by ~(60)Co γ source with our self-(designed) test system, and some valuable results of dark voltage and saturation voltage (varied) with total dose for TCD132D were gotten.