直流磁控溅射法制备含氦铝膜

Helium-Charged Aluminium Films Deposited by Direct Current Magnetron Sputtering

  • 摘要: 采用氦氩混合气氛下直流磁控溅射沉积方法制备含有氦原子的金属铝膜。经碳原子弹性前冲散射分析(C-ERDA),薄膜中氦原子浓度可达约7%,且分布均匀。实验研究了薄膜中的氦含量与溅射真空室气氛中氦的相对含量、基底偏压及沉积温度间的关系。薄膜的X射线衍射分析结果显示:膜中的氦含量变化并未引起明显的峰位移,只是随氦含量增加谱峰宽化。热释放实验证实,氦在薄膜中稳定存在,约500 ℃以上时方出现氦的释放。

     

    Abstract: Helium-charged Al films are prepared by direct current (DC) magnetron sputtering with a He/Ar mixture. C-elastic recoil detection analysis (C-ERDA) spectrum shows that the concentration of helium atoms in He-charged Al films is about 7%. The trapped amount of helium depends on the relative helium content in sputtering gas, applied bias and substrate temperature. The crystal structure is also investigated by XRD. It is proved by thermal desorption spectrometry (TDS) that helium atoms in Al films are stable.

     

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