300#反应堆单晶硅掺杂质量控制

Quality Control for Silicon Neutron Doping in SPRR-300

  • 摘要: 300#反应堆在二十世纪80年代开始开展单晶硅掺杂,目前有6根管道用于硅样品辐照。通过对热中子注量计算和辐照中热中子注量监测的控制,得出目标电阻率命中率达到90%以上。采用旋转电机在辐照中旋转硅样品的方法,控制硅样品径向掺杂的不均匀性小于5%,利用管道轴向中子注量率平坦区,并进行适当的位置调整,控制硅样品轴向掺杂的不均匀性小于5%。

     

    Abstract: Silicon doping in SPRR-300 was begun in 1980s. There are 6 tubes for silicon irradiation now. Through calculating and monitoring curb of thermal neutron fluence, target resistivity hitting ratio is high than 90%. Through spinning the silicon sample during irradiation by a rotate electric motor, uneven proportion of radial doping is controlled below 5%. Through neutron fluence rate smooth area using and silicon sample position adjusting, uneven proportion of axial doping is also controlled below 5%.

     

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