CMOS器件辐照后热退火过程中激发能分布的确定

Determination of Activation Energy Distribution During Thermal Annealing in Post-Irradiation CMOS Devices

摘要: 对CNMOS晶体管辐照后的等温、等时退火特性进行讨论，给出辐照敏感参数在等温、等时退火过程中随退火时间、退火温度的变化关系。根据退火模型计算了CMOS器件辐照后25、100 ^oC等温和25～250 ℃等时退火过程中激发能的分布。结果表明： 25、100 ℃等温退火激发能范围分别在0.65～0.76 eV和0.75～0.95 eV之间；25～250 ℃等时退火的激发能范围在0.5～1.1 eV之间，峰值位于0.81 eV。

Abstract: The annealing characteristics of isothermal and isochronal for post-irradiation CMOS transistor are discussed. The relations about radiation sensitive parameters with isothermal annealing time and isochronal annealing temperature are given. The activation energy distribution during 25, 100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices are calculated by annealing model. According to the result, the range of activation energy for isothermal annealing at 25, 100 ℃ is from 0.65 eV to 0.76 eV and from 0.75 eV to 0.95eV respectively. The range of activation energy for isoch