浮栅ROM器件γ射线、X射线和中子辐射效应实验研究

Experimental Study on Irradiation Effects of γ, X and Neutron in Floating ROM Devices

  • 摘要: 本工作涉及浮栅ROM器件AT29C256的γ射线、X射线和反应堆快中子辐照实验测量。测量结果表明,浮栅ROM器件γ射线、X射线和快中子辐照效应是典型的总剂量效应。错误发生存在剂量阈值,开始出错时的错误数及错误地址不确定,错误数随辐照剂量或注量的增大而增加。

     

    Abstract: γ-ray,X-ray and neutron irradiation effects of floating ROM devices were measured. The measured results show γ-ray,X-ray and neutron irradiation effects of floating ROM devices are total dose effects. There is a dose threshold when error occurs. At the beginning of error occurrence, the error address and data are random, and the data errors number goes up with the increase of dose or fluence.

     

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