Abstract: Palladium films were prepared on the substrate Si by electron beam evaporation, and the thickness and structure of films were characterized. Helium ions with different energies and doses were implanted in the palladium films. Through XRD analysis, it was found that the lattice was swelled when the dose of implantation was increased, and the swell was related to the existence of recoil atoms and helium-vacancy composites. The results of AFM and SEM show that the surface of films becomes flatter because of the sputtering process.