IDT6116单粒子敏感性评估试验技术研究

Study on IDT6116 Single-Event Effect Sensitivity Evaluation Testing Technology

摘要: 为评估IDT6116 SRAM单粒子敏感性，采用地面试验方法和地面试验系统，利用脉冲激光、重离子和²⁵²Cf源 3种不同的地面模拟源，对IDT6116 SRAM器件进行单粒子敏感性试验研究，并对3种不同的模拟源的试验结果进行等效性分析比较，同时进行总剂量效应对单粒子效应影响的试验研究。研究结果表明：IDT6116 SRAM抗单粒子翻转和锁定的能力较强；接受一定辐照剂量后的试验样品对单粒子翻转更加敏感，且翻转阈值略有降低，翻转截面略有增大。

Abstract: Using single-event effect (SEE) sensitivity evaluation test method and test system as well as three kinds of simulation sources (pulsed laser, heavy ion and ²⁵²Cf),the SEE sensitivity of IDT6116 SRAM was experimentally researched. A comparison of testing results’ equivalent for three kinds of simulation sources was performed. In addition, the influence of total dose effects on SEE was also researched. It is seem that occurred single-event upset probability is very little and the resistence to SEE is better for IDT6116 SRAM.