剂量率对MOSFET器件总剂量效应的影响

Influence of γ-ray Dose Rate on Total Ionization Dosefor Power MOSFET

摘要: 选取典型的星用功率MOSFET器件JANTXV 2N6798和JANTXV 2N7261为研究对象，就剂量率对MOSFET器件总剂量效应的影响进行试验研究。在试验中，选取钴-60 γ射线，以不同剂量率进行辐照试验。通过试验研究，获得了被试器件阈值电压、漏电流和击穿电压随总剂量率的变化特性。结果表明，低剂量率更易引起器件损伤。

Abstract: Two typical military power MOSFETs, JANTXV 2N6798 and JANTXV 2N7261, were irradiated by ⁶⁰Co γ-ray at various dose rates. The threshold voltage, breakdown voltage and leakage current characteristic curve vs. irradiation dose were obtained. Test result shows that low dose rate induces device malfunction more easily.