直流电沉积制备纳米铜丝阵列

Synthesis of Cu Nanowire Array by DC Electrodeposition

摘要: 研究采用模板法直流电沉积制备纳米铜丝阵列。基底选用阳极三氧化二铝硬模板，膜底磁控溅射1层薄铜层（1 μm以下）做导电底衬，再利用直流电沉积法制备出纳米铜丝阵列。由此工艺所制备的纳米铜丝长度可达50 μm左右、直径约为250 nm，丝阵含铜量高。讨论了阴极电流密度、阴极电位、模板类型、模板孔径等因素对纳米铜丝生长的影响，为惯性约束聚变（ICF）实验除金腔靶外的其它金属靶的研究提供了一种新方法。

Abstract: The technique to synthesize Cu nanowire array on anodized Al₂O₃templates coated with a thin Cu film by electrodeposition was presented. The length and diameter of Cu nanowires are about 50 μm and 250 nm, respectively. The effects of the current density, the cathode potential, and the pore size of the Al₂O₃ template on the resultant nanowire were analyzed and discussed.